Wolfspeed recently announced its 1200-V (up to 700-A) SiC six-pack power modules for e-mobility propulsion, such as high-power inverters. Power modules offer extensive design optimizations over ...

While SiC isn’t yet a mainstream material in operational tokamaks, it’s on the radar as a plasma-facing material for fusion reactor designs. In the spasmodic quest for an inexhaustible and clean ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

AI is reshaping data center design, with skyrocketing power demands pushing the industry toward more efficient architectures. Artificial intelligence is reshaping data center design, with skyrocketing ...

This article explores the differences between inverters based on silicon power devices and those utilizing WBG technologies, evaluating their advantages, disadvantages, and suitability for different ...

To fully maximize the benefits of WBG tech, system redesign is essential. Wide-bandgap (WBG) semiconductors, namely silicon carbide and gallium nitride, have been an emerging frontier in power ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

A previous article compared silicon carbide power devices based on datasheet specs. This follow-up shifts focus to SiC power modules instead of discrete components. In a previous article, a selection ...

Silicon carbide technology is revolutionizing the power electronics industry, enabling higher efficiency, compact designs, and better thermal performance across various applications. With over twenty ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

If power is also supplied, the Single Pair Ethernet transmission standard with Power over Data Line is unbeatably simple. The reference design for Single Pair Ethernet (SPE) with Power over Data Line ...

Infineon’s monolithic bidirectional GaN HEMTs, built on its CoolGaN technology, represent a remarkable innovation in power electronics. Infineon’s monolithic bidirectional GaN HEMTs, built on its ...